Power Field-Effect Transistor, 13.8A I(D), 100V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
TRENCH >=100V PG-TO263-3
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
TRENCH >=100V PG-TO263-3
MOSFET, P-CH, 100V, TO-263-3 ROHS COMPLIANT: YES
| Rochester Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB19DP10NMATMA1 | IPB19DP10NMATMA1 | 448-IPB19DP10NMATMA1DKR-ND | IPB19DP10NMATMA1 | 90AJ6107 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 100V, To-263-3 Rohs Compliant Infineon | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||
| rDS(on) | 0.1850 ohms | ||||
| Package Type | PG-TO263-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
