TRENCH >=100V PG-TO263-3
Power Field-Effect Transistor, 13.8A I(D), 100V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 2.9A (Ta), 13.8A (Tc) 3.8W (Ta), 83W (Tc) Surface Mount PG-TO263-3
MOSFET, P-CH, 100V, TO-263-3 ROHS COMPLIANT: YES
TRENCH >=100V PG-TO263-3
| ODG (Origin Data Global) | Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB19DP10NMATMA1 | IPB19DP10NMATMA1 | 448-IPB19DP10NMATMA1DKR-ND | 90AJ6107 | IPB19DP10NMATMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 100V, To-263-3 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 2900 milliamps | ||||
| PD | 3800 milliwatts |
