Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1185977-IPA60R125P6
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
MOSFETs HIGH POWER PRICE/PERFORM Product overview: IPA60R125P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R125P6 can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R125P6 | 1185977-IPA60R125P6 | 2088-IPA60R125P6 | IPA60R125P6 | IPA60R125P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | Specialized ICs - IPA60R125P6 | MOSFET Transistor | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||
| rDS(on) | 0.1250 ohms | ||||
| QG | 56 nC | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |