The IPB60R099C7 is a 600V CoolMOS\u2122 C7 superjunction MOSFET designed for high-efficiency power conversion in applications such as server, telecom, and solar power systems. It is packaged in a PG-TO-263 (D\u00b2PAK) case with a continuous drain current rating of 36 A at a junction temperature of 150\u00b0C and a pulsed drain current of 83 A. The device has a maximum on-state resistance of 99 m\u2126 at 25\u00b0C, a total gate charge of 42 nC, and an output capacitance energy of 4.95 \u00b5J at 400 V. It exhibits a dv/dt ruggedness of 120 V/ns and a body diode di/dt of 360 A/\u00b5s. The MOSFET is qualified for industrial-grade applications per JEDEC standards J-STD-20 and JESD22.
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB60R099C7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0990 ohms |
| QG | 42 nC |
