Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1 IPB60R280P7ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 874744-IPB60R280P7AT MA1 Series: CoolMOS™ P7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3 Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package: Reel - TR Mounting: Surface Mount Family Name: IPB60R280 Categories: Discrete Semiconductor Products Case / Package: PG-TO263-3 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 25 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPB60R280P7ATMA1-ND, SP001664942, IPB60R280P7ATMA1DKR, IPB60R280P7ATMA1TR, IPB60R280P7ATMA1CT
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 874744-IPB60R280P7AT MA1 Series: CoolMOS™ P7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3 Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package: Reel - TR Mounting: Surface Mount Family Name: IPB60R280 Categories: Discrete Semiconductor Products Case / Package: PG-TO263-3 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 25 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPB60R280P7ATMA1-ND, SP001664942, IPB60R280P7ATMA1DKR, IPB60R280P7ATMA1TR, IPB60R280P7ATMA1CT
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1 - 874744-IPB60R280P7ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1
874744-IPB60R280P7ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1 874744-IPB60R280P7ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 874744-IPB60R280P7AT MA1 Series: CoolMOS™ P7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3 Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package: Reel - TR Mounting: Surface Mount Family Name: IPB60R280 Categories: Discrete Semiconductor Products Case / Package: PG-TO263-3 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 25 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPB60R280P7ATMA1-ND, SP001664942, IPB60R280P7ATMA1DKR, IPB60R280P7ATMA1TR, IPB60R280P7ATMA1CT

Manufacturer: Infineon Technologies
Win Source Part Number: 874744-IPB60R280P7ATMA1
Series: CoolMOS™ P7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R280
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R280P7ATMA1-ND, SP001664942, IPB60R280P7ATMA1DKR, IPB60R280P7ATMA1TR, IPB60R280P7ATMA1CT

Buy Now Datasheet
Singapore
600V 12A MOSFET Transistor
278-IPB60R280P7ATMA1
600V 12A MOSFET Transistor 278-IPB60R280P7ATMA1
MOSFET N-CH 600V 12A D2PAK Product overview: IPB60R280P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P7ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 12A D2PAK Product overview: IPB60R280P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P7ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB60R280P7ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R280P7ATMA1CT-ND
Single FETs, MOSFETs IPB60R280P7ATMA1CT-ND
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R280P7ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R280P7ATMA1TR-ND
Single FETs, MOSFETs IPB60R280P7ATMA1TR-ND
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R280P7ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R280P7ATMA1DKR-ND
Single FETs, MOSFETs IPB60R280P7ATMA1DKR-ND
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
 - IPB60R280P7ATMA1 - Rochester Electronics
Newburyport, MA, United States
IPB60R280 - 600V CoolMOS N-Channel Power MOSFET

IPB60R280 - 600V CoolMOS N-Channel Power MOSFET

Supplier's Site Datasheet
MOSFETs - 2144370P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144370P
MOSFETs 2144370P
Infineon MOSFET IPB60R280P7ATMA1

Infineon MOSFET IPB60R280P7ATMA1

Supplier's Site
MOSFETs - 2144369 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144369
MOSFETs 2144369
Infineon MOSFET IPB60R280P7ATMA1

Infineon MOSFET IPB60R280P7ATMA1

Supplier's Site
MOSFETs - 2144370 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144370
MOSFETs 2144370
Infineon MOSFET IPB60R280P7ATMA1

Infineon MOSFET IPB60R280P7ATMA1

Supplier's Site
Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Infineon - 49AC7998 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Infineon
49AC7998
Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Infineon 49AC7998
MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET LOW POWER_NEW

MOSFET LOW POWER_NEW

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R280P7ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPB60R280P7ATMA1
Single FETs, MOSFETs IPB60R280P7ATMA1
MOSFET N-CH 600V 12A D2PAK

MOSFET N-CH 600V 12A D2PAK

Supplier's Site Datasheet
MOSFET TO263-3 376-IPB60R280P7ATMA1
MOSFET TO263-3

MOSFET TO263-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB60R280P7ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB60R280P7ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB60R280P7ATMA1
MOSFET N-CH 600V 12A D2PAK

MOSFET N-CH 600V 12A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company VAST STOCK CO., LIMITED ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 874744-IPB60R280P7ATMA1 278-IPB60R280P7ATMA1 IPB60R280P7ATMA1CT-ND IPB60R280P7ATMA1 2144370P 2144369 49AC7998 IPB60R280P7ATMA1 IPB60R280P7ATMA1 376-IPB60R280P7ATMA1 IPB60R280P7ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1 600V 12A MOSFET Transistor Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Infineon MOSFET Single FETs, MOSFETs MOSFET TO263-3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PG-TO263-3 Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB PG-TO263-3 TO-263; TO-263 TO-263; D2pak (to-263) TO-3; TO-263; TO-252 (DPAK) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 600 volts 600 volts 600 volts
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