N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874744-IPB60R280P7AT
Series: CoolMOS™ P7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R280
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R280P7ATMA1-ND,
MOSFET N-CH 600V 12A D2PAK Product overview: IPB60R280P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P7ATMA1
IPB60R280 - 600V CoolMOS N-Channel Power MOSFET
MOSFET N-CH 600V 12A D2PAK
MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 12A D2PAK
| DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB60R280P7ATMA1CT-ND | 874744-IPB60R280P7ATMA1 | 2144370P | 2144369 | 278-IPB60R280P7ATMA1 | IPB60R280P7ATMA1 | IPB60R280P7ATMA1 | 376-IPB60R280P7ATMA1 | IPB60R280P7ATMA1 | 49AC7998 | IPB60R280P7ATMA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R280P7ATMA1 | MOSFETs | MOSFETs | 600V 12A MOSFET Transistor | MOSFET | MOSFET TO263-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Infineon | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3; PG-TO263-3 | TO-263; TO-263 | TO-263; D2pak (to-263) | Tape & Reel (TR) | PG-TO263-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Number of units in IC | 1 | 1 | |||||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE |
