MOSFET P-CH 40V 180A TO263-7 Product overview: IPB180P04P4L02ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB180P04P4L02AT
P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
IPB180P04P - OptiMOS P-Channel 40V Power MOSFET
MOSFET P-CH 40V 180A TO263-7
MOSFET P-CH 40V 180A TO263-7
MOSFET, AEC-Q101, P-CH, -40V, -180A, 150W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB180P04P4L02ATMA2 | 448-IPB180P04P4L02ATMA2CT-ND | 2291821 | IPB180P04P4L02ATMA2 | IPB180P04P4L02ATMA2 | IPB180P04P4L02ATMA2 | 51AH5899 |
| Product Name | 40V 180A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -40V, -180A, 150W Rohs Compliant Infineon | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 150 milliwatts | 150000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
