MOSFET N-CH 40V 160A TO263-7 Product overview: IPB160N04S203ATMA4 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 160A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 160A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB160N04S203ATM
MOSFET N-CH 40V 160A TO263-7
N-Channel 40V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
N-Channel 40V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
Infineon MOSFET IPB160N04S203ATMA4
Infineon MOSFET IPB160N04S203ATMA4
Infineon MOSFET IPB160N04S203ATMA4
Win Source Part Number: 1039548-IPB160N04S20
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SPB160N04S2-03; IPB180N04S4H0ATMA1; IPB180N04S401ATMA1; STH270N4F3-6; STH410N4F7-6AG; STH320N4F6-6IPB160N0
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB160N04S203ATMA4-N
Base Product Number: IPB160
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 160A TO263-7
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB160N04S203ATMA4 | IPB160N04S203ATMA4 | IPB160N04S203ATMA4TR-ND | 2149017 | 1039548-IPB160N04S203ATMA4 | IPB160N04S203ATMA4 | 34AC1655 | IPB160N04S203ATMA4 | IPB160N04S203ATMA4 |
| Product Name | 40V 160A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 40 volts | 40 volts | |||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
