Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7 IPB95R130PFD7

Description
950 V CoolMOS™ PFD7 superjunction MOSFET in D2PAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7 - IPB95R130PFD7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote Datasheet
Description
950 V CoolMOS™ PFD7 superjunction MOSFET in D2PAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs
Request a Quote Datasheet

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7 - IPB95R130PFD7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7
IPB95R130PFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7 IPB95R130PFD7
950 V CoolMOS™ PFD7 superjunction MOSFET in D2PAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDI20N12AF | Gate driver ICs

950 V CoolMOS™ PFD7 superjunction MOSFET in D2PAK package

The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.

This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications.


Summary of Features

  • Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations
  • Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss
  • Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
  • Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss
  • ESD protection (HBM class 2)

Benefits

  • Best-in-class hard commutation ruggedness enabling usage across topologies
  • Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3
  • Power density improvement compared to latest CoolMOS™ C3 and the closest competitor
  • Improved production yield by reducing ESD related failures

Potential Applications

  • Lighting
  • Consumer and Industrial SMPS

Applications

  • LED lighting system designs
  • Power transmission and distribution

Designers who used this product also designed with


  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDI20N12AF |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDI20N12AF |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDI20N12AF |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB95R130PFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R130PFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1300 ohms
QG 141 nC
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