MOSFET N-CH 800V 3.9A TO220
N-Channel 800V 3.9A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Power Field-Effect Transistor, 3.9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 800V, 3.9A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 3.9A TO220
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA80R1K4CEXKSA2 | 2144353 | 2144355P | IPA80R1K4CEXKSA2-ND | IPA80R1K4CEXKSA2 | 13AC9018 | IPA80R1K4CEXKSA2 | IPA80R1K4CEXKSA2 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 3.9A, To-220Fp-3; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 800 volts | |||||||
| IDSS | 3900 milliamps | 3900 milliamps | ||||||
| PD | 31000 milliwatts |
