Manufacturer: Infineon Technologies
Win Source Part Number: 874770-IPD5N25S3430A
Series: Automotive, AEC-Q101, OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 250 V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPD5N25
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3-313
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPD5N25S3430ATMA1-ND
N-Channel 250V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313
N-Channel 250V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313
N-Channel 250V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313
MOSFET N-CH 250V 5A TO252-3 Product overview: IPD5N25S3430ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD5N25S3430ATMA
Power Field-Effect Transistor, 5A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 250V 5A TO252-3
MOSFET N-CH 250V 5A TO252-3
MOSFET, N-CH, 250V, 5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874770-IPD5N25S3430ATMA1 | 448-IPD5N25S3430ATMA1CT-ND | 278-IPD5N25S3430ATMA1 | IPD5N25S3430ATMA1 | 2441593 | IPD5N25S3430ATMA1 | IPD5N25S3430ATMA1 | 43AC3268 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD5N25S3430ATMA1 | Single FETs, MOSFETs | 250V 5A TO252 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 250V, 5A, To-252-3; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; PG-TO252-3-313 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | PG-TO252-3 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
| Transistor Grade / Operating Range | Automotive | |||||||
| MOSFET Operating Mode | Enhancement |
