Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S208ATMA2 IPB80N06S208ATMA2

Description
Manufacturer: Infineon Technologies Win Source Part Number: 127135-IPB80N06S208A TMA2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 215W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 2860pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 127135-IPB80N06S208A TMA2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 215W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 2860pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S208ATMA2 - 127135-IPB80N06S208ATMA2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S208ATMA2
127135-IPB80N06S208ATMA2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S208ATMA2 127135-IPB80N06S208ATMA2
Manufacturer: Infineon Technologies Win Source Part Number: 127135-IPB80N06S208A TMA2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 215W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 2860pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 127135-IPB80N06S208ATMA2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 215W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 2860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.7 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPB80N06S208ATMA2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S208ATMA2-ND
Single FETs, MOSFETs IPB80N06S208ATMA2-ND
N-Channel 55V 80A (Tc) 215W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 215W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Singapore
55V 80A MOSFET Transistor
278-IPB80N06S208ATMA2
55V 80A MOSFET Transistor 278-IPB80N06S208ATMA2
MOSFET N-CH 55V 80A TO263-3 Product overview: IPB80N06S208ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N06S208ATMA 2 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 80A TO263-3 Product overview: IPB80N06S208ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N06S208ATMA2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPB80N06S208ATMA2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80N06S208ATMA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80N06S208ATMA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80N06S208ATMA2
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site
MOSFET N-CHANNEL_55/60V

MOSFET N-CHANNEL_55/60V

Buy Now
MOSFET N-CH 55V 80A TO263-3 - 376-IPB80N06S208ATMA2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 55V 80A TO263-3
376-IPB80N06S208ATMA2
MOSFET N-CH 55V 80A TO263-3 376-IPB80N06S208ATMA2
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 127135-IPB80N06S208ATMA2 IPB80N06S208ATMA2-ND 278-IPB80N06S208ATMA2 IPB80N06S208ATMA2 IPB80N06S208ATMA2 IPB80N06S208ATMA2 376-IPB80N06S208ATMA2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S208ATMA2 Single FETs, MOSFETs 55V 80A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 55V 80A TO263-3
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 215000 milliwatts 215000 milliwatts 215000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; PG-TO263-3-2 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) TO-263; TO-263-3 2860 pF @ 25 V
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