IPD028N06NF2S is a 60 V N-channel power MOSFET in a PG-TO252-3 package, designed for high-current switching applications. It has a maximum drain current of 107 A at 100 °C case temperature and a drain-source on-state resistance of 2.85 mΩ at 10 V gate voltage. The device is rated for 192 mJ single-pulse avalanche energy and operates over a junction temperature range of -55 °C to 175 °C. Thermal resistance from junction to case is 1.0 °C/W. The package dimensions are 6.22 mm in length, 6.73 mm in width, and 10.41 mm in height, with a 4.58 mm lead spacing. The part is RoHS compliant and halogen-free according to IEC 61249-2-21. It is qualified according to JEDEC standards and has been 100% avalanche tested.
StrongIRFET™ 2 single N-channel power MOSFET 60 V in DPAK package
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD028N06NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD028N06NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0029 ohms |
