Manufacturer: Infineon Technologies
Win Source Part Number: 874687-IPB034N06L3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 90A (Tc) 167W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB034
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB034N06L3GATMA1TR,
MOSFET N-CH 60V 90A D2PAK
MOSFET N-CH 60V 90A D2PAK Product overview: IPB034N06L3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB034N06L3GATMA
N-Channel 60V 90A (Tc) 167W (Tc) Surface Mount PG-TO263-3
N-Channel 60V 90A (Tc) 167W (Tc) Surface Mount PG-TO263-3
N-Channel 60V 90A (Tc) 167W (Tc) Surface Mount PG-TO263-3
Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 60V, 90A, 175DEG C, 167W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET N-CH 60V 90A D2PAK
MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874687-IPB034N06L3GATMA1 | IPB034N06L3GATMA1 | 278-IPB034N06L3GATMA1 | IPB034N06L3GATMA1TR-ND | IPB034N06L3GATMA1 | 50Y2003 | IPB034N06L3GATMA1 | IPB034N06L3GATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N06L3GATMA1 | Single FETs, MOSFETs | 60V 90A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 90A, 175Deg C, 167W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; PG-TO263-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts |
