Infineon Technologies AG N-Channel Power MOSFET IPB027N10N5

OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications 24 V EPS with active steering for commercial vehicles Cordless power tools and outdoor power equipment DIN rail power supplies Light electric vehicles (LEV) Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with 2EDL05N06PF | Gate driver ICs IRFS7434-7P | N-Channel Power MOSFET 2EDL05N06PF | Gate driver ICs IRFS7434-7P | N-Channel Power MOSFET 2EDL05N06PF | Gate driver ICs IRFS7434-7P | N-Channel Power MOSFET