Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB65R065C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
  • 500V-950V N-Channel Power MOSFET - IPB65R065C7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
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Datasheet
Datasheet Summary
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The IPB65R065C7 is a 650V N-channel MOSFET based on Infineon's CoolMOS™ C7 superjunction technology, designed for high-efficiency power conversion in applications such as PFC and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems. It is packaged in a D²PAK (PG-TO263) surface-mount package with a maximum continuous drain current of 32A at TC=25°C and a pulsed drain current of 145A. The device has a maximum on-resistance of 65mΩ at Tj=25°C, a gate charge of 64nC, and an avalanche energy rating of 171mJ for single pulses. It meets JEDEC J-STD-020 and JESD22 standards for industrial-grade reliability, features Pb-free plating and halogen-free mold compound, and operates with a junction temperature range of -55°C to 150°C. The thermal resistance from junction to case is 0.73°C/W.

Datasheet Summary
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The IPB65R065C7 is a 650V N-channel MOSFET based on Infineon's CoolMOS™ C7 superjunction technology, designed for high-efficiency power conversion in applications such as PFC and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems. It is packaged in a D²PAK (PG-TO263) surface-mount package with a maximum continuous drain current of 32A at TC=25°C and a pulsed drain current of 145A. The device has a maximum on-resistance of 65mΩ at Tj=25°C, a gate charge of 64nC, and an avalanche energy rating of 171mJ for single pulses. It meets JEDEC J-STD-020 and JESD22 standards for industrial-grade reliability, features Pb-free plating and halogen-free mold compound, and operates with a junction temperature range of -55°C to 150°C. The thermal resistance from junction to case is 0.73°C/W.

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500V-950V N-Channel Power MOSFET - IPB65R065C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPB65R065C7
500V-950V N-Channel Power MOSFET IPB65R065C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • LED strips and signage

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB65R065C7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0650 ohms
QG 64 nC
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