The IPB60R040CFD7 is a 600V CoolMOS™ CFD7 superjunction MOSFET in a D²PAK (PG-TO-263-3) package, designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It features a maximum drain-source voltage of 650V, a typical on-state resistance of 40 mΩ, a gate charge of 108 nC, and a reverse recovery charge of 1.76 µC. The device supports a pulsed drain current of 212 A and exhibits best-in-class reverse diode dv/dt and diF/dt ruggedness with a maximum body diode commutation speed of 1300 A/µs. It is fully qualified according to JEDEC for industrial applications and meets thermal resistance specifications of 0.55 °C/W (junction-to-case) and 35-45 °C/W (junction-to-ambient
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB60R040CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0400 ohms |
| QG | 108 nC |
