IPB014N04NF2S is an N-channel MOSFET rated for 40 V drain-source voltage, designed for high-current switching applications. It is packaged in a D²PAK (PG-TO263-3) with dimensions of 9.65 mm maximum width, 15.88 mm maximum length, and a 2.54 mm lead pitch. The device has a maximum on-state resistance of 1.45 mΩ at 10 V gate voltage and 100 A drain current, and a continuous drain current rating of 150 A at 25 °C case temperature. It supports single-pulse avalanche energy up to 283 mJ, has a gate charge total of 106 nC, and a junction-to-case thermal resistance of 0.65 °C/W. The part is RoHS compliant and halogen-free per IEC 61249-2-21. It meets JEDEC qualification standards.
StrongIRFET™ 2 single N-channel Power MOSFET 40 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.45 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPB014N04NF2S | IPB014N04NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB014N04NF2S | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0014 ohms | |
| QG | 106 nC |
