IPB019N08NF2S is an N-channel power MOSFET rated for 80 V drain-source voltage, with a maximum on-state resistance of 1.95 mΩ and a continuous drain current of 166 A at 25°C case temperature. It is packaged in a PG-TO263-3 (D²PAK) package with dimensions of 9.65 mm maximum length, 10.67 mm maximum width, and 15.88 mm maximum height. The device is 100% avalanche tested, has a gate-source voltage rating of ±20 V, and supports a maximum junction temperature of 175°C. It is RoHS compliant and halogen-free according to IEC 61249-2-21. Thermal resistance from junction to case is 0.6 °C/W, and from junction to ambient is 40 °C/W on a 6 cm² copper PCB. The gate charge totals 124 nC, and reverse recovery charge is 285 nC under specified conditions.
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB019N08NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB019N08NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0019 ohms |
