Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB65R110CFD7

Description
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications DIN rail power supplies Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPB65R110CFD7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications DIN rail power supplies Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPB65R110CFD7 is a 650V CoolMOS™ CFD7 superjunction MOSFET in a D²PAK (PG-TO263-3) package, designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge converters in industrial power applications. It features a maximum on-state resistance of 110 mΩ, a pulsed drain current of 82 A, and an ultra-fast body diode with a maximum reverse recovery di/dt of 1300 A/µs. The device meets JEDEC standards for industrial applications and supports high power density designs with reduced switching losses and low temperature-dependent RDS(on).

Datasheet Summary
Powered by GS/AI

The IPB65R110CFD7 is a 650V CoolMOS™ CFD7 superjunction MOSFET in a D²PAK (PG-TO263-3) package, designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge converters in industrial power applications. It features a maximum on-state resistance of 110 mΩ, a pulsed drain current of 82 A, and an ultra-fast body diode with a maximum reverse recovery di/dt of 1300 A/µs. The device meets JEDEC standards for industrial applications and supports high power density designs with reduced switching losses and low temperature-dependent RDS(on).

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPB65R110CFD7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPB65R110CFD7
500V-950V N-Channel Power MOSFET IPB65R110CFD7
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications DIN rail power supplies Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.


Summary of Features

  • Ultrafast body diode and very low Qrr
  • 650V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on) dependency over temperature

Benefits

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

Potential Applications

  • Fast EV charging
  • Server power supply
  • Solutions for solar energy systems
  • Telecom infrastructure

Applications

  • DIN rail power supplies

Designers who used this product also designed with


  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB65R110CFD7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1100 ohms
QG 41 nC
Unlock Full Specs
to access all available technical data