Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB60R070CFD7

Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and EOSS Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server Telecom EV charging Applications 1-phase string inverter solutions Refrigerators and freezers Designers who used this product also designed with 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE3AR1080JG | CoolSET™ Fixed Frequency 1ED3123MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE3AR1080JG | CoolSET™ Fixed Frequency 1 2 3