The IPB60R105CFD7 is a 600V CoolMOS™ CFD7 superjunction MOSFET in a D²PAK (PG-TO263-3) package, designed for high-efficiency resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It features a reduced gate charge of 42 nC, best-in-class reverse recovery charge of up to 0.96 µC, and a maximum on-state resistance of 105 mΩ. The device supports a pulsed drain current of 79 A and has a maximum junction temperature of 150°C. It is fully qualified per JEDEC standards for industrial applications and offers enhanced reverse diode dv/dt and diF/dt ruggedness with a maximum commutation speed of 1300 A/µs. Thermal resistance from junction to case is 1.18°C/W, and to ambient is 62°C/W on a minimal PCB footprint.
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
1
2
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB60R105CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1050 ohms |
| QG | 42 nC |
