Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB60R105CFD7

Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and EOSS Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server Telecom EV charging Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with IRS4427S | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2