N-Channel 800V 17A (Tc) 30W (Tc) Through Hole PG-TO220-3-FP
Power Field-Effect Transistor, 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon MOSFET IPAN80R280P7XKSA1
MOSFET, N-CH, 800V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 17A TO220
| DigiKey | Rochester Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPAN80R280P7XKSA1-ND | IPAN80R280P7XKSA1 | 2224648 | IPAN80R280P7XKSA1 | 24AC9034 | IPAN80R280P7XKSA1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 17A, To-220Fp; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
