Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 500V 7.5A TO220
MOSFET N-CH 500V 7.5A TO220 Product overview: IPA50R280CEXKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R280CEXKSA2
N-Channel 500V 7.5A (Tc) 30.4W (Tc) Through Hole PG-TO220-3-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 001840-IPA50R280CEXK
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 350μA
Max Gate Charge: 32.6nC @ 10V
Max Input Capacitance: 773pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.2A, 13V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 500V, 18.1A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 500V 7.5A TO220
| Rochester Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA50R280CEXKSA2 | IPA50R280CEXKSA2 | 278-IPA50R280CEXKSA2 | 448-IPA50R280CEXKSA2-ND | 001840-IPA50R280CEXKSA2 | IPA50R280CEXKSA2 | 12AC9687 | IPA50R280CEXKSA2 |
| Product Name | Single FETs, MOSFETs | 500V 7.5A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA50R280CEXKSA2 | MOSFET | Mosfet, N-Ch, 500V, 18.1A, To-220Fp; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| rDS(on) | 0.2800 ohms | 0.2500 ohms | ||||||
| Package Type | PG-TO22-3 | TO-220; TO-220-3 Full Pack | Tube | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | |
| Packing Method | Tube; Tube | Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
