MOSFET N-CH 60V 45A/180A TO263-7 Product overview: IPB010N06NATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB010N06NATMA1 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 45A/180A TO263-7
Power Field-Effect Transistor, 45A I(D), 60V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Manufacturer: Infineon Technologies
Win Source Part Number: 1045751-IPB010N06NAT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-7
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 45A (Ta), 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 280μA
Max Gate Charge: 208nC @ 10V
Max Input Capacitance: 15000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel 60V 45A (Ta), 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 45A (Ta), 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 45A (Ta), 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
MOSFET N-CH 60V 45A/180A TO263-7
MOSFET, N-CH, 60V, 180A, TO-263- 7; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB010N06NATMA1 | IPB010N06NATMA1 | IPB010N06NATMA1 | 1045751-IPB010N06NATMA1 | IPB010N06NATMA1DKR-ND | IPB010N06NATMA1 | IPB010N06NATMA1 | 79X1431 |
| Product Name | 60V 45A 180A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB010N06NATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 180A, To-2637; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| Transconductance | 0.1600 kS | |||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts |
