Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA70R600P7S

Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Cordless vacuum cleaners LED lighting system designs
Request a Quote Datasheet
Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Cordless vacuum cleaners LED lighting system designs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA70R600P7S - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA70R600P7S
500V-950V N-Channel Power MOSFET IPA70R600P7S
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Cordless vacuum cleaners LED lighting system designs

Infineon’s answer for flyback topologies

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

Summary of Features

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
    • Low switching losses (E oss)
    • Highly efficient
    • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

Benefits

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

Potential Applications

  • Charger
  • Adapter
  • TV
  • Lighting
  • Audio
  • Aux power

Applications

  • Cordless vacuum cleaners
  • LED lighting system designs
Supplier's Site Datasheet
Transistors - IPA70R600P7S - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA70R600P7S
Transistors IPA70R600P7S
TO-220FP MOSFETs ROHS

TO-220FP MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPA70R600P7S IPA70R600P7S
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.6000 ohms
QG 10.5 nC
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