The IPA70R600P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive applications such as chargers, adapters, and lighting. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67 to 16.15 mm in length, 10.00 to 10.65 mm in width, and 28.70 to 29.75 mm in height. The device has a maximum drain-source on-state resistance of 0.60 Ω, a pulsed drain current of 20.5 A, and a gate charge total of 10.5 nC. It features an integrated ESD protection diode with HBM Class 2 ruggedness, thermal resistance junction-to-case of 5.0 °C/W, and operates over a junction temperature range of -40 °C to 150 °C. The device is qualified according to JEDEC standards.
Infineon’s answer for flyback topologies
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPA70R600P7S | IPA70R600P7S |
| Product Name | 500V-950V N-Channel Power MOSFET | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.6000 ohms | |
| QG | 10.5 nC |