Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R310PFD7 IPB95R310PFD7

Description
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications EV charging LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
Request a Quote Datasheet
Description
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications EV charging LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
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Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R310PFD7 - IPB95R310PFD7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R310PFD7
IPB95R310PFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R310PFD7 IPB95R310PFD7
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications. Summary of Features Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss ESD protection (HBM class 2) Benefits Best-in-class hard commutation ruggedness enabling usage across topologies Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3 Power density improvement compared to latest CoolMOS™ C3 and the closest competitor Improved production yield by reducing ESD related failures Potential Applications Lighting Consumer and Industrial SMPS Applications EV charging LED lighting system designs Power transmission and distribution Designers who used this product also designed with XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1EDB7275F | Gate driver ICs 1EDN7550B | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0

950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package

The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.

This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications.


Summary of Features

  • Integrated fast body diode with ultra low Qrr enabling usage in half- and full-bridge configurations
  • Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss
  • Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
  • Improved efficiency in hard & soft switching applications enabled by reduced Eoss and Qoss
  • ESD protection (HBM class 2)

Benefits

  • Best-in-class hard commutation ruggedness enabling usage across topologies
  • Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3
  • Power density improvement compared to latest CoolMOS™ C3 and the closest competitor
  • Improved production yield by reducing ESD related failures

Potential Applications

  • Lighting
  • Consumer and Industrial SMPS

Applications

  • EV charging
  • LED lighting system designs
  • Power transmission and distribution

Designers who used this product also designed with


  • XMC1403-Q064X0200 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDB7275F |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • XMC1403-Q064X0200 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDB7275F |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • XMC1403-Q064X0200 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1EDB7275F |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB95R310PFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R310PFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3100 ohms
QG 61 nC
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