Win Source Part Number: 959003-BFU660F,115
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 5.5V
Current - Collector (Ic) (Max): 60mA
Gain: 12dB ~ 21dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 2V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Package / Case: SOT-343F
Supplier Device Package: 4-DFP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): BFU630F,115; BFU690F,115; BFU610F,115; MT3S16U(TE85L,F); 2SC4774T106S; 2SC4713KT146RBFU660F
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: NXP USA Inc.
Other Names: 2156-BFU660F,115,NXP
Base Product Number: BFU660
RF TRANS NPN 5.5V 21GHZ 4DFP
RF TRANS NPN 5.5V 21GHZ 4DFP Product overview: BFU660F,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.5V, 21GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.5V, 21GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFU660F,115 can be used for catalog matching and distributor lookup.
RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP
RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP
RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
RF TRANSISTOR, NPN, 5.5V, SOT-343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:21GHz; Power Dissipation Pd:225mW; DC Collector Current:60mA; DC Current Gain hFE:90hFE; RF Transistor RoHS Compliant: Yes
TRANSISTOR, RF, NPN, 5.5V, 21GHZ, SOT-343F, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:5.5V; Transition Frequency:21GHz; Power Dissipation:225mW; Continuous Collector Current:30mA; No. of Pins:4Pins; MSL:- RoHS Compliant: Yes
RF TRANS NPN 5.5V 21GHZ 4DFP
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Richardson RFPD | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 959003-BFU660F,115 | BFU660F,115 | 283-BFU660F,115 | 568-8454-6-ND | BFU660F,115 | 31AC6250 | 24T6117 | BFU660F,115 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | 5.5V 21GHZ Bipolar Transistor | Bipolar RF Transistors | RF Small Signal Transistor Bipolar/HBT | Rf Transistor, Npn, 5.5V, Sot-343F; Transistor Polarity Nxp | Transistor, Rf, Npn, 5.5V, 21Ghz, Sot-343F, Full Reel; Transistor Polarity Nxp | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | NPN | ||
| Package Type | SOT3 | SOT-343F | Tape & Reel (TR) | SOT-343F | TO-3; SOT3 | TO-3; SOT3 | ||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | |||||
| Power Gain | 12 to 21 dB | 12 dB | 25 dB | |||||
| Output Power | 0.2250 watts | 0.2250 watts | 0.2250 watts |
