Mitsubishi Electric & Electronics USA, Inc. Power IGBT Transistor CM1000DUC-34SA

Description
Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Description
Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Product
Description
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Downers Grove, IL, United States
Power IGBT Transistor
CM1000DUC-34SA
Power IGBT Transistor CM1000DUC-34SA
Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Supplier's Site Datasheet
Igbt Module, Dual, 1.7Kv, 1Ka; Continuous Collector Current Mitsubishi Electric - 90W4337 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, Dual, 1.7Kv, 1Ka; Continuous Collector Current Mitsubishi Electric
90W4337
Igbt Module, Dual, 1.7Kv, 1Ka; Continuous Collector Current Mitsubishi Electric 90W4337
IGBT MODULE, DUAL, 1.7KV, 1KA; Continuous Collector Current:1kA; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:10kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV RoHS Compliant: Yes

IGBT MODULE, DUAL, 1.7KV, 1KA; Continuous Collector Current:1kA; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:10kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number CM1000DUC-34SA 90W4337
Product Name Power IGBT Transistor Igbt Module, Dual, 1.7Kv, 1Ka; Continuous Collector Current Mitsubishi Electric
Package Type MPD type TO-3
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