The ARF300 is an N-channel enhancement mode RF power transistor designed for high-voltage narrowband ISM and MRI power amplifiers up to 45 MHz. It is housed in a flangeless package with a thermal resistance from junction to case of 0.15 °C/W and is rated for a drain-source voltage of 500 V, continuous drain current of 24 A, and total power dissipation of 1000 W at 25 °C. The device operates over a junction temperature range of -55 to 175 °C and meets RoHS compliance. Functional performance includes 300 W output power at 27 MHz with 15 dB gain and 80% efficiency. The transistor is capacitance-matched to the ARF301 for bridge configurations. Maximum safe operating area is specified with single-pulse operation, and it exhibits electrical ruggedness under a 10:1 VSWR at 300 W output.
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | ARF300 |
| Product Name | RF Power Transistor |
| Output Power | 300 watts |
