Mitsubishi Electric Automation, Inc. Power IGBT Transistor CM450DX-13T

Description
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals
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Description
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals
Request a Quote
Datasheet
Datasheet Summary
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The CM450DX-13T is a high-power insulated IGBT module designed for switching applications such as AC motor control and servo systems. It features a flat base with a nickel-plated copper base plate, tin-plated pin terminals, and RoHS compliance. The device offers a collector current rating of 450 A and a collector-emitter voltage rating of 650 V, with a maximum junction temperature of 175 °C. It is configured as a dual switch (half-bridge) and is UL recognized under UL1557, File No. E323585.

Datasheet Summary
Powered by GS/AI

The CM450DX-13T is a high-power insulated IGBT module designed for switching applications such as AC motor control and servo systems. It features a flat base with a nickel-plated copper base plate, tin-plated pin terminals, and RoHS compliance. The device offers a collector current rating of 450 A and a collector-emitter voltage rating of 650 V, with a maximum junction temperature of 175 °C. It is configured as a dual switch (half-bridge) and is UL recognized under UL1557, File No. E323585.

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - CM450DX-13T - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
CM450DX-13T
Power IGBT Transistor CM450DX-13T
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals
  • Flat base type
  • Copper base plate (Nickel-plating)
  • RoHS Directive compliant
  • Tin-plating pin terminals
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number CM450DX-13T
Product Name Power IGBT Transistor
Package Type NX Type
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