NXP Semiconductors Bipolar RF Transistors BFU725F/N1,115

RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO

RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO

RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO

RF TRANS NPN 2.8V 55GHZ 4SO Product overview: BFU725F/N1,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.8V, 55GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 2.8V, 55GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFU725F/N1,115 can be used for catalog matching and distributor lookup.

Manufacturer: NXP
Win Source Part Number: 100269-BFU725F/N1,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 24dB
Frequency - Transition: 55GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-SO
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 160 @ 10mA, 2V
Maximum Power Dissipation: 136mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

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