NXP Semiconductors TRANSISTORS - RF Transistors (BJT) - BFU768F,115 BFU768F,115

Manufacturer: NXP
Win Source Part Number: 115380-BFU768F,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13.1dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-DFP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 155 @ 10mA, 2V
Maximum Power Dissipation: 220mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP

RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP

BFU768F - NPN WIDEBAND SILICON G Product overview: BFU768F,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFU768F,115 can be used for catalog matching and distributor lookup.

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