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RF TRANS NPN 3V 53GHZ 3DFN1006 Product overview: BFU730LXZ from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 53GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 3V, 53GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFU730LXZ can be used for catalog matching and distributor lookup.
RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount DFN1006C-3
RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount DFN1006C-3
RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount DFN1006C-3
Manufacturer: NXP
Win Source Part Number: 1023271-BFU730LXZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 15.8dB
Frequency - Transition: 53GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 3-DFN1006 (1.0x0.6)
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 3V
Typical Gain (hFE) (Min): 205 @ 2mA, 3V
Maximum Power Dissipation: 160mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
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RF TRANS NPN 3V 53GHZ 3DFN1006
RF TRANS NPN 3V 53GHZ 3DFN1006
RF TRANSISTOR, NPN, 3V, 53GHZ, SOT883C; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:3V; Transition Frequency ft:53GHz; Power Dissipation Pd:160mW; DC Collector Current:30mA; DC Current Gain hFE:205hFE; RF Transistor RoHS Compliant: Yes
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | BFU730LXZ | 283-BFU730LXZ | 568-13122-2-ND | 1023271-BFU730LXZ | 568-BFU730LXZ | BFU730LXZ | BFU730LXZ | BFU730LXZ | 31AC6255 |
| Product Name | RF Small Signal Transistor Bipolar/HBT | 3V 53GHZ Bipolar Transistor | Bipolar RF Transistors | TRANSISTORS - RF Transistors (BJT) - BFU730LXZ | Trans GP BJT NPN 3V 0.03A 3-Pin SOT-883C T/R | RF Bipolar Transistors | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor, Npn, 3V, 53Ghz, Sot883C; Transistor Polarity Nxp |
| Polarity | NPN | NPN | NPN; NPN | NPN | NPN; NPN | NPN | |||
| Package Type | Tape & Reel (TR) | 3-XFDFN | SOT3; 3-DFN1006 (1.0x0.6) | 3-XFDFN | TO-3 | ||||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| IC(max) | 5 milliamps | 30 milliamps | |||||||
| VCEO | 3 volts | 3 volts | 3 volts | 3 volts |
