Mitsubishi Electric & Electronics USA, Inc. Power IGBT Transistor CM200DY-12NF

Description
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i
Request a Quote Datasheet
Description
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Power IGBT Transistor
CM200DY-12NF
Power IGBT Transistor CM200DY-12NF
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i

Supplier's Site Datasheet
IGBT Module - 11477607 - Radwell International
Willingboro, NJ, United States
IGBT Module
11477607
IGBT Module 11477607
IGBT MODULE, NF SERIES, 600V, 200A, 650W, DUAL (HALF BRIDGE). FREE 2 YEAR RADWELL WARRANTY

IGBT MODULE, NF SERIES, 600V, 200A, 650W, DUAL (HALF BRIDGE). FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Igbt Module, 600V, 200A; Continuous Collector Current Mitsubishi Electric - 73K1935 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 600V, 200A; Continuous Collector Current Mitsubishi Electric
73K1935
Igbt Module, 600V, 200A; Continuous Collector Current Mitsubishi Electric 73K1935
IGBT MODULE, 600V, 200A; Continuous Collector Current:200A; Power Dissipation:650W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V; Product Range:NF Series RoHS Compliant: Yes

IGBT MODULE, 600V, 200A; Continuous Collector Current:200A; Power Dissipation:650W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V; Product Range:NF Series RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Radwell International Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number CM200DY-12NF 11477607 73K1935
Product Name Power IGBT Transistor IGBT Module Igbt Module, 600V, 200A; Continuous Collector Current Mitsubishi Electric
Package Type std type TO-3
Unlock Full Specs
to access all available technical data