Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i
IGBT MODULE, 600V, 200A; Continuous Collector Current:200A; Power Dissipation:650W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V; Product Range:NF Series RoHS Compliant: Yes
IGBT MODULE, NF SERIES, 600V, 200A, 650W, DUAL (HALF BRIDGE). FREE 2 YEAR RADWELL WARRANTY
| Richardson RFPD | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | CM200DY-12NF | 73K1935 | 11477607 |
| Product Name | Power IGBT Transistor | Igbt Module, 600V, 200A; Continuous Collector Current Mitsubishi Electric | IGBT Module |
| Package Type | std type | TO-3 |
