Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF ARF475FL

Description
Win Source Part Number: 1028830-ARF475FL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 500 V Frequency: 128MHz Current - Test: 15 mA Gain: 16dB Transistor Type: 2 N-Channel (Dual) Common Source Voltage - Test: 150 V Power - Output: 900W Alternative Parts (Cross-Reference): STE53NC50; STE70NM50; STE40NC60; STE48NM50; STE70NM60; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 10A REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: ARF475
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Description
Win Source Part Number: 1028830-ARF475FL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 500 V Frequency: 128MHz Current - Test: 15 mA Gain: 16dB Transistor Type: 2 N-Channel (Dual) Common Source Voltage - Test: 150 V Power - Output: 900W Alternative Parts (Cross-Reference): STE53NC50; STE70NM50; STE40NC60; STE48NM50; STE70NM60; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 10A REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: ARF475
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Datasheet
Datasheet Summary
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The ARF475FL is a high-voltage RF power MOSFET designed for applications in narrow band ISM and MRI power amplifiers, operating up to 128 MHz. It features a maximum drain-source voltage of 500 V and can deliver a peak output power of 900 W with a gain of 15 dB in Class AB operation. The device is capable of continuous drain current up to 10 A and has a minimum efficiency of 50%.

This product is constructed as a matched pair of RF power transistors in a common source configuration, housed in a T3A package. It offers low thermal resistance and high-voltage breakdown capabilities, ensuring rugged performance in demanding applications. The ARF475FL is RoHS compliant, making it suitable for environmentally conscious designs.

Engineers considering this component should note its thermal characteristics, including a junction-to-case thermal resistance of 0.15 °C/W, and its dynamic performance metrics, such as input capacitance of approximately 740 to 830 pF. The device is designed for push-pull or parallel operation, making it versatile for various RF amplification needs.

Datasheet Summary
Powered by GS/AI

The ARF475FL is a high-voltage RF power MOSFET designed for applications in narrow band ISM and MRI power amplifiers, operating up to 128 MHz. It features a maximum drain-source voltage of 500 V and can deliver a peak output power of 900 W with a gain of 15 dB in Class AB operation. The device is capable of continuous drain current up to 10 A and has a minimum efficiency of 50%.

This product is constructed as a matched pair of RF power transistors in a common source configuration, housed in a T3A package. It offers low thermal resistance and high-voltage breakdown capabilities, ensuring rugged performance in demanding applications. The ARF475FL is RoHS compliant, making it suitable for environmentally conscious designs.

Engineers considering this component should note its thermal characteristics, including a junction-to-case thermal resistance of 0.15 °C/W, and its dynamic performance metrics, such as input capacitance of approximately 740 to 830 pF. The device is designed for push-pull or parallel operation, making it versatile for various RF amplification needs.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1028830-ARF475FL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1028830-ARF475FL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1028830-ARF475FL
Win Source Part Number: 1028830-ARF475FL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 500 V Frequency: 128MHz Current - Test: 15 mA Gain: 16dB Transistor Type: 2 N-Channel (Dual) Common Source Voltage - Test: 150 V Power - Output: 900W Alternative Parts (Cross-Reference): STE53NC50; STE70NM50; STE40NC60; STE48NM50; STE70NM60; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 10A REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: ARF475

Win Source Part Number: 1028830-ARF475FL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Bulk
Standard Package: 1
Voltage - Rated: 500 V
Frequency: 128MHz
Current - Test: 15 mA
Gain: 16dB
Transistor Type: 2 N-Channel (Dual) Common Source
Voltage - Test: 150 V
Power - Output: 900W
Alternative Parts (Cross-Reference): STE53NC50; STE70NM50; STE40NC60; STE48NM50; STE70NM60;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Current Rating (Amps): 10A
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: ARF475

Buy Now Datasheet
RF Power Transistor - ARF475FL - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
ARF475FL
RF Power Transistor ARF475FL
The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

Supplier's Site Datasheet
RF FETs, MOSFETs - ARF475FL-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
ARF475FL-ND
RF FETs, MOSFETs ARF475FL-ND
RF Mosfet 2 N-Channel (Dual) Common Source 150V 15mA 128MHz 16dB 900W

RF Mosfet 2 N-Channel (Dual) Common Source 150V 15mA 128MHz 16dB 900W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ARF475FL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ARF475FL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ARF475FL
RF MOSFET 150V

RF MOSFET 150V

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors RF MOSFET Transistors Transistors RF Transistors
Product Number 1028830-ARF475FL ARF475FL ARF475FL-ND ARF475FL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF RF Power Transistor RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Output Power 900 watts 900 watts
Power Gain 16 dB 15 dB
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