Rochester Electronics Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| 1.7A, 400V, 3.4ohm, N-Channel Power MOSFET, TO-251 | |
| 1.7A, 400V, 3.4ohm, N-Channel Power MOSFET, TO-252 | |
| 100V N-Channel Power MOSFET | |
| 10A, 400V, 0.5ohm, N-Channel Power MOSFET | |
| 11A, 30V, 0.0094ohm, N-Channel Power MOSFET | |
| 12V-300V N-Channel Power MOSFET | |
| 15A, 60V, 0.085ohm, N-Channel Power MOSFET, TO-220AB | |
| 15A, 60V, 0.085ohm, N-Channel Power MOSFET | |
| 15A, 60V, 0.09ohm, N-Channel Power MOSFET | |
| 15A, 60V, 0.12ohm, N-Channel Power MOSFET | |
| 2.2A, 150V, 1.5 OHM, N-Channel POWER MOSFET | |
| 2.2A, 250V, 2ohm, N-Channel Power MOSFET | |
| 2.5A, 20V, 0.25ohm, P-Channel Power MOSFET | |
| 20A, 500V, 0.24ohm, N-Channel Power MOSFET | |
| 3.0A, 150V, 1.2 OHM, N-Channel POWER MOSFET | |
| 3.3A, 200V, 1.5ohm, N-Channel Power MOSFET | |
| 3.5A, 100V, 0.8ohm, P-Channel, POWER MOSFET | |
| 3.5A, 500V, 1.5ohm, N-Channel Power MOSFET, TO-251 | |
| 3.5A, 500V, 1.5ohm, N-Channel Power MOSFET, TO-252 | |
| 30V, 54A, N-Channel Power MOSFET | |
| 3A, 600V, 2ohm, N-Channel Power MOSFET, TO-220AB | |
| 4.0 A, 80 V PNP Darlington Bipolar Power Transistor | |
| 4.6A, 30V, 0.07ohm, P-Channel Power MOSFET | |
| 40V StrongIRFET N-Channel Power MOSFET | |
| 4A, 200V, 1.2ohm, N-Channel Power MOSFET | |
| 5.5A, 400V, 1ohm, N-Channel Power MOSFET, TO-263AB | |
| 50 V, 2 A NPN high power bipolar transistor | |
| 500V CoolMOS N-Channel Power MOSFET | |
| 50A, 30V, 0.012ohm, N-Channel Power MOSFET, TO-252AA | |
| 6.0 A, 100 V PNP Bipolar Power Transistor | |
| 6A, 600V, 1.2ohm, N-Channel Power MOSFET | |
| 8.4A, 100V, 0.2ohm, N-Channel Power MOSFET, TO-251 | |
| 8A, 500V, 0.8ohm, N-Channel Power MOSFET, TO-262AA | |
| HEXFET Power MOSFET | |
| IRFH3702 - 12V-300V N-Channel Power MOSFET | |
| IRFH4251 - 12V-300V N-Channel Power MOSFET | |
| IRFH5006 - 12V-300V N-Channel Power MOSFET | |
| IRFH5053 - 12V-300V N-Channel Power MOSFET | |
| IRFH5110PBF - 150V Single N-Channel StrongIRFET Power MOSFET | |
| IRFH5301 - 12V-300V N-Channel Power MOSFET | |
| IRFH7004 - 12V-300V N-Channel Power MOSFET | |
| IRFH7084 - 12V-300V N-Channel Power MOSFET | |
| IRFH7440 - 12V-300V N-Channel Power MOSFET | |
| IRFH7934 - 12V-300V N-Channel Power MOSFET | |
| IRFH8303 - HEXFET Power MOSFET | |
| IRFH8307 - 12V-300V N-Channel Power MOSFET | |
| IRFH8318 - 12V-300V N-Channel Power MOSFET | |
| IRFHS9301 - 30V Single P-Channel HEXFET Power MOSFET | |
| IRFI4229 - 12V-300V N-Channel Power MOSFET | |
| IRFP054 - 12V-300V N-Channel Power MOSFET | |
| IRFP260 - 12V-300V N-Channel Power MOSFET | |
| IRFP3306 - 12V-300V N-Channel Power MOSFET | |
| IRFP4368 - 12V-300V N-Channel Power MOSFET | |
| IRFP7430 - 12V-300V N-Channel Power MOSFET | |
| IRFR024NPbF - HEXFET Power MOSFET, 12V-300V N-Channel Power MOSFET | |
| IRFR120NPbF - HEXFET Power MOSFET | |
| IRFR3709 - 12V-300V N-Channel Power MOSFET | |
| IRFR3910 - HEXFET N-Channel Power MOSFET | |
| IRFR4104 - 12V-300V N-Channel Power MOSFET | |
| IRFR540ZPbF - Automotive HEXFET P-Channel Power MOSFET | |
| IRFR5410 - Automotive HEXFET P-Channel Power MOSFET | |
| IRFR6215 - 20V-250V P-Channel Power MOSFET | |
| IRFR7440 - 12V-300V N-Channel Power MOSFET | |
| IRFR7540 - 90A, 60V, 0.0048ohm, N-Chanel Power MOSFET, TO-252AA | |
| IRFR9120 - HEXFET Power MOSFET | |
| IRFS3006 - HEXFET N-Channel Power MOSFET | |
| IRFS31N20 - 12V-300V N-Channel Power MOSFET | |
| IRFS3306 - 12V-300V N-Channel Power MOSFET | |
| IRFS3307 - HEXFET Power MOSFET | |
| IRFS4010 - 100V Single N-Channel StrongIRFET Power MOSFET | |
| IRFS4227 - 12V-300V N-Channel Power MOSFET | |
| IRFS4321 - 12V-300V N-Channel Power MOSFET | |
| IRFS7430-7PPbF - HEXFET Power MOSFET, 12V-300V N-Channel Power MOSFET | |
| IRFSL3207 - 12V-300V N-Channel Power MOSFET | |
| IRFU024NPBF - HEXFET Power MOSFET Planar40<-<100V | |
| IRFU220NPBF - HEXFET Power MOSFET | |
| IRFU2405PBF - HEXFET Power MOSFET | |
| IRFZ34 - 12V-300V N-Channel Power MOSFET | |
| IRFZ44NS - 55V Single N-Channel HEXFET Power MOSFET | |
| IRL3713 - 12V-300V N-Channel Power MOSFET | |
| IRL40T209 - 12V-300V N-Channel Power MOSFET | |
| IRL7833 - N-Channel Power MOSFET | |
| IRLB3813 - 12V-300V N-Channel Power MOSFET | |
| IRLH5030 - HEXFET Power MOSFET | |
| IRLHM620PBF - 20V Single N-Channel StrongIRFET Power MOSFET | |
| IRLHS2242 - HEXFET Power MOSFET | |
| IRLHS2242PbF - HEXFET Power MOSFET | |
| IRLHS6376 - 20V-100V N-Channel Small Power MOSFET | |
| IRLIZ3 - HEXFET Power MOSFET | |
| IRLML2030 - 30V Single N-Channel HEXFET Power MOSFET | |
| IRLML6401 - 20V-250V P-Channel Power MOSFET | |
| IRLML9301 - -30V Single P-Channel StrongIRFET Power MOSFET | |
| IRLR3110 - 12V-300V N-Channel Power MOSFET | |
| ISC16DP15LM - OptiMOS Power-Transistor -150V | |
| ISZ56DP15LM - OptiMOS Power-Transistor -150V | |
| ISZ75DP15LM - OptiMOS Power-Transistor -150V | |
| Lithium-Ion Battery Protection IC with Integrated Power MOSFET | |
| LTC1155 - Dual High SIDE Micropower MOSFET Driver | |
| LTC2926 - MOSFET-Controlled Power Supply TRACKER | |
| LYE16350XH - RF Power Transistor (Cus Special) | |
| MCH6337 - P-Channel Power MOSFET, -20V, -4.5A, 49mOhm, Single MCPH6 | |
| Medium Power NPN Bipolar Power Transistor | |
| MHT1006N - Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V | |
| MHTG1200 - RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | |
| MJD148 - 45 V, 4 A NPN high power bipolar transistor | |
| MJD32C - 100 V, 3 A PNP high power bipolar transistor | |
| MJD32CA - 100 V, 3 A PNP high power bipolar transistor | |
| MJD42C - 100 V, 6 A PNP high power bipolar transistor | |
| MJD45H11 - 8 A, 80 V PNP Power Bipolar Junction Transistor | |
| MMRF1006 - Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | |
| MMRF1008 - Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | |
| MMRF1009 - Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | |
| MMRF1011H - Pulse Lateral N-Channel RF Power MOSFET | |
| MMRF1015 - Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | |
| MMRF1024 - Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V | |
| MMRF1314 - RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V | |
| MMRF1315 - Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V | |
| MRF085H - Wideband RF Power LDMOS Transistor, 85W | |
| MRF1K50 - RF Power LDMOS Transistor | |
| MRF24300 - RF Power LDMOS Transistor | |
| MRF24301 - RF Power LDMOS Transistor, 2450 MHz, 300 W CW, 32 V | |
| MRF24G300 - RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | |
| MRF6V13250HS - Lateral N-Channel RF Power MOSFET | |
| MRF8P9040 - CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | |
| MRF8P9210 - Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V | |
| MRF8S9200 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | |
| MRF8S9232 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V | |
| MRF8VP13350GN - RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | |
| MRFE6VP6600GN - Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V | |
| MX0912B351Y - NPN Silicon RF Power Transistor | |
| N-Channel Enhancement-Mode RF Power Lateral LDMOSFET | |
| N-Channel Power MOSFET | |
| NE5550979 - RF Power Field-Effect Transistor, N-Channel MOSFET, N-Channel MOSFET | |
| NP69N03 - Power MOSFET 40V 110A | |
| NPN microwave power transistor | |
| NTB190N65S3HF - Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 20 A, D2PAK | |
| NTBLS1D5N08MC - N-Channel, MOSFET - Power | |
| NTMFD4 - N-Channel Dual MOSFET Power | |
| NTMFD4902 - Power MOSFET 30V 18A 6.5 Dual N-Channel SO-8FL with Schottky Diode | |
| NTMFD4C50 - Power Field-Effect Transistor | |
| NTMFD4C820N - Dual N-Channel Power MOSFET 30 V Dual N Channel | |
| NTMFD5875NL - MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL | |
| NTMFS0D7N03CG - MOSFET, Power, 30V N-Channel, SO8-FL | |
| NTMFS4983NF - Power MOSFET 30 V, 106 A, Single N Channel, SO8 FL | |
| NTMFS4C01N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 0.9 m, 303 A | |
| NTMFS4C01N - Single NChannel Power MOSFET 30V, 303A | |
| NTMFS4C022N - MOSFET Power, Single, N-Channel, SO-8FL | |
| NTMFS4C024N - MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 78 A | |
| NTMFS4C028N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A | |
| NTMFS4C029N - MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A | |
| NTMFS4C029N - Single NChannel Power MOSFET 30 V, 46 A | |
| NTMFS4C03N - Power MOSFET, Single, N-Channel, SO-8FL 30 V, 2.1 m, 136 A | |
| NTMFS4C05N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 78 A | |
| NTMFS4C06N - MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 69 A NFET SO8FL 30V 69A 4MOHM | |
| NTMFS4C06N - MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A NFET SO8FL 30V 69A 4MOHM | |
| NTMFS4C09N - MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A | |
| NTMFS4C10N - MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 46 A | |
| NTMFS4C324N - MOSFET Power, Single, N-Channel, SO-8FL 30 V, 1.7 m , 136 A | |
| NTMFS4C50NT1G - 30 V, 46A, Single N-Channel, Power MOSFET | |
| NTMFS4C59N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A | |
| NTMFS4C800N - Power MOSFET 30 V, 46 A, Single N Channel, SO8 FL | |
| NTMFS4C805N - Power MOSFET 30 V, 78 A, Single N Channel, SO8 FL | |
| NTMFS4C805NA - MOSFET - Power, Single N-Channel, SO-8 FL 30V, 78A | |
| NTMFS4C806N - Power MOSFET 30 V, 69 A, Single N Channel, SO8 FL | |
| NTMFS4C808N - Power MOSFET 30 V, 52 A, Single N Channel, SO8 FL | |
| NTMFS4C810NA - MOSFET - Power, Single N-Channel, SO-8FL 30V, 46A | |
| OptiMOS Power Transistor, -150V | |
| PNP Bipolar Power Transistor | |
| Power Bipolar Transistor, 0.5A, 50V, 7-Element, NPN, Plastic/Epoxy, 16 Pin | |
| Power Bipolar Transistor, 1.5A, 400V, NPN, TO-126, 3 Pin | |
| Power Bipolar Transistor, 42V V(BR)CEO, 3-Element, NPN, Silicon, TO-5, Metal, 3 Pin | |
| Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 5A, 600V, NPN, 3 Pin | |
| Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 11.9A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 11A I(D), 30V, 0.00341ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
| Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 135A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 2.5A I(D), 30V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 2.6A I(D), 52V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | |
| Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 24A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 298A I(D), 30V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 30A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 31A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
| Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Power Field-Effect Transistor, 44A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | |
| Power Field-Effect Transistor, 50A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | |
| Power Field-Effect Transistor, 56A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 75.4A I(D), 150V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 75A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 78A I(D), 150V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | |
| Power Field-Effect Transistor, 8.7A I(D), 150V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
| Power Field-Effect Transistor, 82A, 55V, N-Channel MOSFET | |
| Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, N-Channel MOSFET | |
| Power Field-Effect Transistor, N-Channel, MOSFET | |
| Power Field-Effect Transistor | |
| Power MOSFET 500V 10.5A 0.52 Ohm Single N-Channel TO-220FP Optimized | |
| Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | |
| RF L Band, N-Channel Power MOSFET, TO-272 | |
| RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2.62Ghz, NI-780, MOSFET | |
| RF Power Field-Effect Transistor, N-Channel Enhancement Mode Lateral MOSFET | |
| RF Power Field-Effect Transistor, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor | |
| RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V | |
| RF S Band, N-Channel Power MOSFET | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-270 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-272 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET | |
| Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg, 28 V | |
| Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | |
| Wideband RF Power LDMOS Transistor |
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