N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W (Tc) Surface Mount PQFN (5x6) Single Die
N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W (Tc) Surface Mount PQFN (5x6) Single Die
N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W (Tc) Surface Mount PQFN (5x6) Single Die
MOSFET N-CH 30V 35A/100A PQFN Product overview: IRFH5301TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 35A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 35A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5301TRPBF can be used for catalog matching and distributor lookup.
IRFH5301 - 12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 084007-IRFH5301TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6) Single Die
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 100μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 5114pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.85 mOhm @ 50A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 35A/100A PQFN
30V 35A 3.6W 1.85mΩ@10V,50A 2.35V@100uA N Channel PQFN-8(4.9x5.8) MOSFETs ROHS
MOSFET N-CH 30V 35A/100A PQFN
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFH5301TRPBFDKR-ND | 278-IRFH5301TRPBF | IRFH5301TRPBF | 084007-IRFH5301TRPBF | IRFH5301TRPBF | 2575887 | IRFH5301TRPBF | IRFH5301TRPBF | 91Y4698 | IRFH5301TRPBF |
| Product Name | Single FETs, MOSFETs | 30V 35A 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5301TRPBF | Single FETs, MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 100A, Pqfn-8; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | 8-PowerVDFN | Tape & Reel (TR) | PG-TDSON-8 | SOT3; PQFN (5x6) Single Die | 8-PowerVDFN | PQFN | 8-PowerVDFN | TO-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||||
| Transconductance | 0.2180 kS |
