Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS150A IRFS150A

The IRFS150A is an N-channel power MOSFET designed for high-efficiency switching applications, featuring a drain-source voltage rating of 100 V and a continuous drain current of 31 A at 25°C. It is packaged in a TO-3PF case with an operating junction temperature range of -55°C to +175°C. The device has a typical on-state resistance of 0.032 Ω at 10 V gate-source voltage and a single-pulsed avalanche energy rating of 641 mJ. It meets the AEC-Q200 automotive qualification standard and is rated for a maximum lead temperature of 300°C for 5 seconds during soldering. Thermal resistance from junction to case is 1.5°C/W, and junction-to-ambient is 40°C/W. The gate-to-source voltage is protected up to ±20 V, and the device exhibits low leakage current with a maximum of 100 μA at 100 V drain-source voltage and 150°C junction temperature.