Infineon Technologies AG 30V 27A 120A MOSFET Transistor IRFH8318TRPBF

MOSFET N-CH 30V 27A/120A PQFN Product overview: IRFH8318TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 27A, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 27A, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8318TRPBF can be used for catalog matching and distributor lookup.

N-Channel 30V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)

N-Channel 30V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)

N-Channel 30V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)

Manufacturer: Infineon Technologies
Win Source Part Number: 099333-IRFH8318TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Ta), 120A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 3180pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Infineon IRFH8318TRPBF

Infineon IRFH8318TRPBF

Infineon IRFH8318TRPBF

IRFH8318 - 12V-300V N-Channel Power MOSFET