Infineon Technologies AG IRFU2405PBFAKLA1

IRFU2405PBF is a surface mount N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It comes in a straight lead package with a maximum continuous drain current of 40 A at 100°C and 56 A at 25°C, and a drain-source on-resistance of 0.016 Ω at VGS = 10 V. The device has a drain-source breakdown voltage of 55 V, a gate-source voltage rating of ±20 V, and a maximum junction temperature of 175°C. It is fully avalanche rated with single-pulse avalanche energy of 130 mJ and features a peak diode recovery dv/dt of 5.0 V/ns. Thermal resistance junction-to-case is 1.4 °C/W and junction-to-ambient is 50 °C/W when mounted on a PCB. The part meets RoHS requirements and is lead-free as indicated by the 'P' in the part number.