Infineon Technologies AG 100V 88A MOSFET Transistor IRFS4410PBF

Description
12V-300V N-Channel Power MOSFET
Request a Quote Datasheet
Description
12V-300V N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IRFS4410PBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
 - IRFS4410PBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Singapore, Singapore
100V 88A MOSFET Transistor
278-IRFS4410PBF
100V 88A MOSFET Transistor 278-IRFS4410PBF
MOSFET N-CH 100V 88A D2PAK Product overview: IRFS4410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 88A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 88A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4410PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 88A D2PAK Product overview: IRFS4410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 88A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 88A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4410PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFS4410PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS4410PBF-ND
Single FETs, MOSFETs IRFS4410PBF-ND
N-Channel 100V 88A (Tc) 200W (Tc) Surface Mount D2PAK

N-Channel 100V 88A (Tc) 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4410PBF - 1047142-IRFS4410PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4410PBF
1047142-IRFS4410PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4410PBF 1047142-IRFS4410PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047142-IRFS4410PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 5150pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1047142-IRFS4410PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 5150pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS4410PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS4410PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS4410PBF
MOSFET N-CH 100V 88A D2PAK

MOSFET N-CH 100V 88A D2PAK

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFS4410PBF 278-IRFS4410PBF IRFS4410PBF-ND 1047142-IRFS4410PBF IRFS4410PBF
Product Name 100V 88A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4410PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type D2PAK Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tube; Tube Tube Rail; Tube; Tube/Rail Tube; Tube
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