MOSFET 2N-CH 25V 64A/188A TISON8 Product overview: IRFH4251DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 64A, 188A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 64A, 188A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRFH4251DTRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual), Schottky 25V 64A, 188A 31W, 63W Surface Mount PG-TISON-8
IRFH4251 - 12V-300V N-Channel Power MOSFET
MOSFET 2N-CH 25V 64A/188A PQFN
Manufacturer: Infineon Technologies
Win Source Part Number: 135644-IRFH4251DTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Family Name: IRFH4251D
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Maximum Power Dissipation: 31W, 63W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 64A, 188A
Gate-Source Threshold Voltage: 2.1V @ 35μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1314pF @ 13V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): FDPC8016S; FDPC8014S;
Introduction Date: June 10, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 25V 64A/188A TISON8
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
MOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-10; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:188A; On Resistance Rds(on):600µohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRFH4251DTRPBF | IRFH4251DTRPBFTR-ND | IRFH4251DTRPBF | IRFH4251DTRPBF | 135644-IRFH4251DTRPBF | IRFH4251DTRPBF | IRFH4251DTRPBF | 19X2758 |
| Product Name | 25V 64A 188A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4251DTRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N Channel, 25V, 188A, Pqfn-10; Transistor Polarity Infineon | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| PD | 31000 milliwatts | 31000 to 63000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | Tape & Reel (TR) | 8-PowerVDFN | TISON8 | 8-PowerVDFN | SOT3; PQFN (5x6) | TO-3 |
