Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP254B IRFP254B

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 875149-IRFP254B Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
Request a Quote
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 875149-IRFP254B Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IRFP254B is a 250V N-channel MOSFET designed for high-efficiency switching applications such as DC/DC converters and switch-mode power supplies. It is packaged in a TO-3P case and rated for a continuous drain current of 25 A at 25°C junction temperature. The device has a maximum on-state resistance of 0.14 Ω at a gate-source voltage of 10 V, a total gate charge of 95 nC typical, and a reverse transfer capacitance of 60 pF typical. It is 100% avalanche tested with a single-pulsed avalanche energy rating of 700 mJ and a peak diode recovery dv/dt of 5.5 V/ns. The operating and storage temperature range is -55°C to +150°C, with a thermal resistance from junction to case of 0.56°C/W.

Datasheet Summary
Powered by GS/AI

The IRFP254B is a 250V N-channel MOSFET designed for high-efficiency switching applications such as DC/DC converters and switch-mode power supplies. It is packaged in a TO-3P case and rated for a continuous drain current of 25 A at 25°C junction temperature. The device has a maximum on-state resistance of 0.14 Ω at a gate-source voltage of 10 V, a total gate charge of 95 nC typical, and a reverse transfer capacitance of 60 pF typical. It is 100% avalanche tested with a single-pulsed avalanche energy rating of 700 mJ and a peak diode recovery dv/dt of 5.5 V/ns. The operating and storage temperature range is -55°C to +150°C, with a thermal resistance from junction to case of 0.56°C/W.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP254B - 875149-IRFP254B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP254B
875149-IRFP254B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP254B 875149-IRFP254B
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 875149-IRFP254B Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 875149-IRFP254B
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 875149-IRFP254B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP254B
Package Type SOT3
Unlock Full Specs
to access all available technical data