onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MCH3421-TL-E

Description
Power Field-Effect Transistor, N-Channel, MOSFET
Request a Quote Datasheet
Description
Power Field-Effect Transistor, N-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MCH3421-TL-E - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel, MOSFET

Power Field-Effect Transistor, N-Channel, MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 977854-MCH3421-TL-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
977854-MCH3421-TL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 977854-MCH3421-TL-E
Win Source Part Number: 977854-MCH3421-TL-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 890mOhm @ 400mA, 10V Power Dissipation (Max): 900mW (Ta) Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-MCPH Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 20 V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. HTSUS: 8541.21.0095 Mfr: onsemi Other Names: 2156-MCH3421-TL-E,ON SONSMCH3421-TL-E,215 6-MCH3421-TL-E-ONTR- ND Product Status: Obsolete

Win Source Part Number: 977854-MCH3421-TL-E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 890mOhm @ 400mA, 10V
Power Dissipation (Max): 900mW (Ta)
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-MCPH
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 20 V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: 2156-MCH3421-TL-E,ONSONSMCH3421-TL-E,2156-MCH3421-TL-E-ONTR-ND
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MCH3421-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MCH3421-TL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MCH3421-TL-E
MOSFET N-CH 100V 800MA 3MCPH

MOSFET N-CH 100V 800MA 3MCPH

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MCH3421-TL-E 977854-MCH3421-TL-E MCH3421-TL-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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