MOSFET N-CH 60V 11A/40A 8PQFN Product overview: IRFH5406TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 11A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5406TRPBF can be used for catalog matching and distributor lookup.
N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Infineon Technologies
Win Source Part Number: 1046882-IRFH5406TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Family Name: IRFH5406
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 50μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1256pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.4 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): DMT6015LPS-13; AON6266; TSM170N06PQ56 RLG; Si7850ADP-T1-GE3;
Introduction Date: April 12, 2010
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
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(PRICE/TC) MOSFET, N-CH, 60V, 40A, 150DEG C, 46W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:40A; ON RESISTANCE RDS(ON):0.0114OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 40A, 150DEG C, 46W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH5406TRPBF | IRFH5406TRPBFCT-ND | 1046882-IRFH5406TRPBF | IRFH5406TRPBF | 2579375 | IRFH5406TRPBF | IRFH5406TRPBF | 376-IRFH5406TRPBF | IRFH5406TRPBF | 108090818 | 91Y4699 |
| Product Name | 60V 11A 40A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5406TRPBF | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 60V 40A 8-PQFN | MOSFET | Transistor | Mosfet, N-Ch, 60V, 40A, 150Deg C, 46W; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||||
| Transconductance | 0.0270 kS | ||||||||||
| PD | 46 milliwatts | 3600 to 46000 milliwatts | 3600 milliwatts | 3600 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
