MOSFET N-CH 55V 56A DPAK Product overview: IRFR2405TRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 56A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 56A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR2405TRLPBF can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak
N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak
N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 069538-IRFR2405TRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2430pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 34A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 55V, 56A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0118ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET MOSFT 55V 56A 16mOhm 70nC
POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 55V, 0.016OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 55V 56A DPAK
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-IRFR2405TRLPBF | 2583984 | IRFR2405TRLPBF | 448-IRFR2405TRLPBFCT-ND | 069538-IRFR2405TRLPBF | 49AC0311 | IRFR2405TRLPBF | 108088281 | IRFR2405TRLPBF |
| Product Name | 55V 56A DPAK MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR2405TRLPBF | Mosfet, N-Ch, 55V, 56A, To-252; Transistor Polarity Infineon | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 55 volts | 55 volts | |||||||
| PD | 110 milliwatts | 110000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
