onsemi Single FETs, MOSFETs NTD14N03RG

Description
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK
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Description
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NTD14N03RGOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD14N03RGOS-ND
Single FETs, MOSFETs NTD14N03RGOS-ND
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK

N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK

Buy Now Datasheet
 - NTD14N03RG - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD14N03RG - 1083747-NTD14N03RG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD14N03RG
1083747-NTD14N03RG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD14N03RG 1083747-NTD14N03RG
Manufacturer: ON Semiconductor Win Source Part Number: 1083747-NTD14N03RG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 1.8nC @ 5V Max Input Capacitance: 115pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083747-NTD14N03RG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 1.8nC @ 5V
Max Input Capacitance: 115pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 95 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD14N03RG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD14N03RG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD14N03RG
MOSFET N-CH 25V 2.5A DPAK

MOSFET N-CH 25V 2.5A DPAK

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD14N03RGOS-ND NTD14N03RG 1083747-NTD14N03RG NTD14N03RG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD14N03RG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); DPAK, TO-252 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
rDS(on) 0.1300 ohms
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube; Tube
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