POWER MOSFET, N-CHANNEL, SUPERFE Product overview: NTD360N65S3H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD360N65S3H can be used for catalog matching and distributor lookup.
Win Source Part Number: 1383073-NTD360N65S3H
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® III
Package: Tape & Reel
Standard Package: 2,500 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 700µA
Power Dissipation (Max): 83W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: ON Semiconductor
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
POWER MOSFET, N-CHANNEL, SUPERFE
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 650V, 10A, TO-252 ROHS COMPLIANT: YES
POWER MOSFET, N-CHANNEL, SUPERFE
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTD360N65S3H | 2296453P | 1383073-NTD360N65S3H | NTD360N65S3H | 488-NTD360N65S3HDKR-ND | NTD360N65S3H | 50AJ5886 | NTD360N65S3H |
| Product Name | N-Channel MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 10A, To-252 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| PD | 83 milliwatts | 83000 milliwatts | 83000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
