Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF IRFU3607PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017723-IRFU3607PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRFU3607 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF; Introduction Date: March 04, 2008 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF - 017723-IRFU3607PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFU3607PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFETs - 6887134 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1657585 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRFU3607PBF-ND - DigiKey
    DigiKey
  • IRFU3607PBF - Rochester Electronics
    Rochester Electronics
  • Transistor - 66783495 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU3607PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017723-IRFU3607PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRFU3607 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF; Introduction Date: March 04, 2008 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF - 017723-IRFU3607PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF
017723-IRFU3607PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF 017723-IRFU3607PBF
Manufacturer: Infineon Technologies Win Source Part Number: 017723-IRFU3607PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRFU3607 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF; Introduction Date: March 04, 2008 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017723-IRFU3607PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: IRFU3607
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3070pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF;
Introduction Date: March 04, 2008
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFU3607PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU3607PBF
Single FETs, MOSFETs IRFU3607PBF
MOSFET N-CH 75V 56A IPAK

MOSFET N-CH 75V 56A IPAK

Supplier's Site Datasheet
MOSFETs - 6887134 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6887134
MOSFETs 6887134
MOSFET N-Channel 75V 80A HEXFET IPAK

MOSFET N-Channel 75V 80A HEXFET IPAK

Supplier's Site
MOSFETs - 1657585 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1657585
MOSFETs 1657585
MOSFET N-Channel 75V 80A HEXFET IPAK

MOSFET N-Channel 75V 80A HEXFET IPAK

Supplier's Site
Single FETs, MOSFETs - IRFU3607PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU3607PBF-ND
Single FETs, MOSFETs IRFU3607PBF-ND
N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
- IRFU3607PBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRFU3607PBF
IRFU3607PBF
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFU3607PBF
MOSFET IRFU3607PBF
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg

MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg

Buy Now Datasheet
Transistor - 66783495 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66783495
Transistor 66783495
MOSFET TRANSISTOR, N CHANNEL, 56 A, 75 V, 7.34 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 56 A, 75 V, 7.34 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU3607PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU3607PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU3607PBF
MOSFET N-CH 75V 56A IPAK

MOSFET N-CH 75V 56A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. DigiKey Rochester Electronics VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 017723-IRFU3607PBF IRFU3607PBF 6887134 IRFU3607PBF-ND IRFU3607PBF IRFU3607PBF 66783495 IRFU3607PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF Single FETs, MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 75 volts 75 volts
PD 140000 milliwatts 140000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; IPAK (TO-251) TO-251-3 Short Leads, IPak, TO-251AA Ipak (to-251) TO-251-3 Short Leads, IPAK, TO-251AA IPAK TO-251-3 Short Leads, IPak, TO-251AA
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