Infineon Technologies AG Single FETs, MOSFETs IRFU3607PBF

Description
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IRFU3607PBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU3607PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU3607PBF
Single FETs, MOSFETs IRFU3607PBF
MOSFET N-CH 75V 56A IPAK

MOSFET N-CH 75V 56A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF - 017723-IRFU3607PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF
017723-IRFU3607PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF 017723-IRFU3607PBF
Manufacturer: Infineon Technologies Win Source Part Number: 017723-IRFU3607PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRFU3607 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF; Introduction Date: March 04, 2008 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017723-IRFU3607PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: IRFU3607
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3070pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): AP94T07GJ-HF; STB140NF75-1; IRFR3607PBF; IRFR3607TRPBF;
Introduction Date: March 04, 2008
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFU3607PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU3607PBF-ND
Single FETs, MOSFETs IRFU3607PBF-ND
N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
MOSFETs - 6887134 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6887134
MOSFETs 6887134
MOSFET N-Channel 75V 80A HEXFET IPAK

MOSFET N-Channel 75V 80A HEXFET IPAK

Supplier's Site
MOSFETs - 1657585 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1657585
MOSFETs 1657585
MOSFET N-Channel 75V 80A HEXFET IPAK

MOSFET N-Channel 75V 80A HEXFET IPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU3607PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU3607PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU3607PBF
MOSFET N-CH 75V 56A IPAK

MOSFET N-CH 75V 56A IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg

MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg

Buy Now Datasheet
Transistor - 66783495 - Radwell International
Willingboro, NJ, United States
Transistor
66783495
Transistor 66783495
MOSFET TRANSISTOR, N CHANNEL, 56 A, 75 V, 7.34 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 56 A, 75 V, 7.34 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Rochester Electronics ODG (Origin Data Global) Win Source Electronics DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFU3607PBF IRFU3607PBF 017723-IRFU3607PBF IRFU3607PBF-ND 6887134 IRFU3607PBF IRFU3607PBF 66783495
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3607PBF Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
rDS(on) 0.0090 ohms
Package Type IPAK TO-251-3 Short Leads, IPak, TO-251AA SOT3; IPAK (TO-251) TO-251-3 Short Leads, IPAK, TO-251AA Ipak (to-251) TO-251-3 Short Leads, IPak, TO-251AA
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube; Tube
Transistor Technology / Material MOSFET (Metal Oxide)
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