Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS820B IRFS820B

The IRFS820B is a 500V N-channel MOSFET in a TO-220F package, designed for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It has a continuous drain current of 2.5A at 25°C case temperature, an on-state resistance of 2.6Ω at 10V gate-source voltage, and a total gate charge of 14nC. The device features low reverse transfer capacitance (typical 10pF), fast switching, and 100% avalanche testing. It operates from -55°C to +150°C junction temperature, with a peak diode recovery dv/dt of 5.5V/ns and single-pulsed avalanche energy of 200mJ. The package is a thermally enhanced TO-220F with 3 leads, and the part meets RoHS compliance. Thermal resistance junction-to-case is 3.74°C/W maximum.