MOSFET N-CH 200V 18A TO220AB Product overview: IRFB4020PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4020PBF can be used for catalog matching and distributor lookup.
MOSFET N-Channel 200V 18A HEXFET TO220AB
MOSFET N-Channel 200V 18A HEXFET TO220AB
MOSFET N-Channel 200V 18A HEXFET TO220AB
Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069452-IRFB4020PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1200pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V 18A TO220AB
IRFB4020 - 12V-300V N-CHANNEL PO
MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
MOSFET N-CH 200V 18A TO220AB
200V 18A 100mΩ@10V,11A 100W 4.9V@100uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 200V 18A TO-220AB
MOSFET Transistor, N Channel, 18 A, 200 V, 100 mohm, 10 V, 4.9 V RoHS Compliant: Yes
MOSFET, N Ch., Digital Audio, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, Pb-Free
MOSFET TRANSISTOR, N CHANNEL, 18 A, 200 V, 100 MOHM, 10 V, 4.9 V ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | Newark, An Avnet Company | Allied Electronics, Inc. | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFB4020PBF | 6886939 | 6886939P | IRFB4020PBF | IRFB4020PBF-ND | 069452-IRFB4020PBF | IRFB4020PBF | IRFB4020PBF | IRFB4020PBF | IRFB4020PBF | 376-IRFB4020PBF | 61M6831 | 70017969 | 38346179 |
| Product Name | 200V 18A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4020PBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET N-CH 200V 18A TO-220AB | Mosfet Transistor, N Channel, 18 A, 200 V, 100 Mohm, 10 V, 4.9 V Rohs Compliant Infineon | MOSFET, N Ch., Digital Audio, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, Pb-Free | Transistor | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | |||||||||
| Transconductance | 0.0240 kS | |||||||||||||
| PD | 100 milliwatts | 100000 milliwatts | 100000 milliwatts | 100000 milliwatts | 100 milliwatts |
